document number: 83717 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.7, 13-oct-09 153 optocoupler, phototransistor output, with base connection 4n35-x, 4n36-x, 4n37-x, 4n38 vishay semiconductors description this data sheet presents five families of vishay industry standard single channel phototransistor couplers. these families include the 4n35, 4n36, 4n37, 4n38 couplers. each optocoupler consists of gallium arsenide infrared led and a silicon npn phototransistor. these couplers are underwriters laboratories (ul) listed to comply with a 5300 v rms isolation test voltage. this isolation performance is accomplished through vishay double molding isolation manufa cturing process. comliance to din en 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. these isolation processes and the vishay iso9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. the devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standar d tube shipping containers. note: for additional design information see application note 45 normalized curves features ? isolation test voltage 5300 v rms ? interfaces with common logic families ? input-output coupling capacitance < 0.5 pf ? industry standard dual-in-line 6 pin package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? ac mains detection ? reed relay driving ? switch mode power supply feedback ? telephone ring detection ? logic ground isolation ? logic coupling with high frequency noise rejection agency approvals ? underwriters laboratory file no. e52744 ? din en 60747-5-5 (vde 0884) available with option 1 note for additional information on the availabl e options refer to option information. i179004-2 1 2 3 6 5 4 b c e a c n c v de i179004-1 order information part remarks 4n35-x000 ctr > 100 %, dip-6 4n36-x000 ctr > 100 %, dip-6 4n37-x000 ctr > 100 %, dip-6 4n38 ctr > 20 %, dip-6 4n35-x006 ctr > 100 %, dip-6 400 mil (option 6) 4N35-X007 ctr > 100 %, smd-6 (option 7) 4n35-x009 ctr > 100 %, smd-6 (option 9) 4n36-x007 ctr > 100 %, smd-6 (option 7) 4n36-x009 ctr > 100 %, smd-6 (option 9) 4n37-x006 ctr > 100 %, dip-6 400 mil (option 6) 4n38-x009 ctr > 100 %, smd-6 (option 9)
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83717 154 rev. 1.7, 13-oct-09 4n35-x, 4n36-x, 4n37-x, 4n38 vishay semiconductors optocoupler, phototransistor output, with base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering cond itions for surface mounted devic es (smd). refer to wave profile for soldering conddit ions for through hole devices (dip). absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power dissipation p diss 100 mw output collector emitter breakdown voltage v ceo 70 v emitter base breakdown voltage v ebo 7v collector current i c 50 ma t 1 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage v iso 5300 v rms creepage 7mm clearance 7mm isolation thickness between emitter and detector 0.4 mm comparative tracking index din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature (2) max.10 s dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics (1) parameter test condition part symbol min. typ. max. unit input junction capacitance v r = 0 v, f = 1 mhz c j 50 pf forward voltage (2) i f = 10 ma v f 1.3 1.5 v i f = 10 ma, t amb = - 55 c v f 0.9 1.3 1.7 v reverse current (2) v r = 6 v i r 0.1 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf output collector emitter breakdown voltage (2) i c = 1 ma 4n35 bv ceo 30 v 4n36 bv ceo 30 v 4n37 bv ceo 30 v 4n38 bv ceo 80 v emitter collector breakdown voltage (2) i e = 100 a bv eco 7v
document number: 83717 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.7, 13-oct-09 155 4n35-x, 4n36-x, 4n37-x, 4n38 optocoupler, phototransistor output, with base connection vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. minimum and maximum values are testing require ments. typical values are characteristics of the devic e and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. (2) indicates jedec registered value. note (1) indicates jedec r egistered values. note (1) indicates jedec r egistered values. output collector base breakdown voltage (2) i c = 100 a, i b = 1 a 4n35 bv cbo 70 v 4n36 bv cbo 70 v 4n37 bv cbo 70 v 4n38 bv cbo 80 v collector emitter leakage current (2) v ce = 10 v, i f = 0 4n35 i ceo 550na 4n36 i ceo 550na v ce = 10 v, i f = 0 4n37 i ceo 550na v ce = 60 v, i f = 0 4n38 i ceo 50 na v ce = 30 v, i f = 0, t amb = 100 c 4n35 i ceo 500 a 4n36 i ceo 500 a 4n37 i ceo 500 a v ce = 60 v, i f = 0, t amb = 100 c 4n38 i ceo 6a collector emitter capacitance v ce = 0 c ce 6pf coupler resistance, input output (2) v io = 500 v r io 10 11 capacitance, input output f = 1 mhz c io 0.5 pf current transfer ratio parameter test condition part symbol min typ. max unit dc current transfer ratio (1) v ce = 10 v, i f = 10 ma 4n35 ctr dc 100 % 4n36 ctr dc 100 % 4n37 ctr dc 100 % v ce = 10 v, i f = 20 ma 4n38 ctr dc 20 % v ce = 10 v, i f = 10 ma, t a = - 55 c to + 100 c 4n35 ctr dc 40 50 % 4n36 ctr dc 40 50 % 4n37 ctr dc 40 50 % 4n38 ctr dc 30 % switching characteristics parameter test condition symbol min. typ. max. unit switching time (1) v cc = 10 v, i c = 2 ma, r l = 100 t on , t off 10 s electrical characteristics (1) parameter test condition part symbol min. typ. max. unit
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83717 156 rev. 1.7, 13-oct-09 4n35-x, 4n36-x, 4n37-x, 4n38 vishay semiconductors optocoupler, phototransistor output, with base connection typical characteristics t amb = 25 c, unless otherwise specied fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr vs. led current fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter current vs. temperature and led current i4n25_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f -for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 8 5 c i4n25_02 0.0 0.5 1.0 1.5 0 10 100 i f - led c u rrent (ma) n ctr n ctr(sat) n ctr - n ormalized ctr ctr ce(sat) = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c t a = 25 c n ormalized to: 1 i4n25_03 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr ctr ce(sat) v ce = 0.4 v n ctr n ctr(sat) t a = 50 c n ormalized to: v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_04 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 70 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_05 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr - n ormalized ctr n ctr n ctr(sat) t a = 8 5 c n ormalized to: ctr ce(sat) v ce = 0.4 v v ce = 10 v , i f = 10 ma, t a = 25 c i4n25_06 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 8 5 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c
document number: 83717 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.7, 13-oct-09 157 4n35-x, 4n36-x, 4n37-x, 4n38 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 7 - collector emitter lea kage current vs. temperature fig. 8 - normalized ctr cb vs. led current and temperature fig. 9 - normalized photocurrent vs. i f and temperature fig. 10 - normalized non-saturated h fe vs. base current and temperature fig. 11 - normalized h fe vs. base current and temperature fig. 12 - propagation delay vs. collector load resistor i4n25_07 100 8 0 60 40 20 0 - 20 10 - 2 10 - 1 10 0 10 1 10 2 10 3 10 4 10 5 t am b - am b ient temperat u re (c) i ceo - collector emitter (na) typical v ce = 10 v i4n25_0 8 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led c u rrent (ma) n ctr c b - n ormalized ctr c b 0.1 1 10 100 n ormalized to: v cb = 9.3 v , i f = 10 ma, t a = 25 c i4n25_09 0. 0.01 1 1 10 i f - led c u rrent (ma) n ormalized photoc u rrent 0.1 1 10 100 i f = 10 ma, t a = 25 c n i b , t a = - 20 c n ormalized to: n i b , t a = 20 c n i b , t a = 50 c n i b , t a = 70 c i4n25_10 0.4 0.6 1.0 1.2 i b - base c u rrent ( a) 1 10 100 1000 i b = 20 a, v ce = 10 v , t a = 25 c 25 c 70 c - 20 c n h fe - n ormalized h fe 0. 8 n ormalized to: i4n25_11 0.0 0.5 1.0 1.5 25 c - 20 c 50 c 70 c n h fe(sat) - n ormalized sat u rated h fe 1 10 100 1000 v ce = 10 v , i b = 20 a t a = 25 c v ce = 0.4 v i b - base c u rrent ( a) n ormalized to: i4n25_12 1 10 100 1000 r l - collector load resistor (k ) t plh - propagation delay ( s) 2.5 2.0 1.5 1.0 0.1 1 10 100 i f = 10 ma, t a = 25 c v cc = 5.0 v , v th = 1.5 v t plh t phl t phl - propagation delay ( s)
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83717 158 rev. 1.7, 13-oct-09 4n35-x, 4n36-x, 4n37-x, 4n38 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 13 - switching timing fig. 14 - switching schematic package dimensions in millimeters package marking i4n25_13 i f t r = 1.5 v v o t d t s t f t phl t plh v th i4n25_14 v cc = 5 v f = 10 khz df = 50 % r l v o i f = 10 ma i17 8 004 0.25 typ. 2.9 3 3.30 3. 8 1 0. 8 min. 7.62 typ. 0. 8 0.9 2.54 typ. 1 min. 0.45 0.55 0.55 6.3 6.5 8 .5 8 .7 pin one id 6 5 4 1 2 3 1 8 3 to 9 7.62 to 8 . 8 1 4 typ. iso method a 0.45 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15 max. option 9 0.35 0.25 10.16 10.92 7. 8 7.4 10.36 9.96 option 6 8 min. 7.62 typ. 4.6 4.1 8 .4 min. 10.3 max. 0.7 option 7 1 8 450 21764-23 4 n 35 x017t v y ww h 6 8
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